| PART |
Description |
Maker |
| LT1361 LT1361CN8 LT1361CS8 LT1362 LT1362CN LT1362C |
Dual and Quad 50MHz/ 800V/us Op Amps
OCTAL BUFFERS AND LINE DRIVERS 20-SO 0 to 70
Dual and Quad 50MHz, 800V/us Op Amps
From old datasheet system
Dual and Quad 50MHz, 800V/s Op Amps
Dual and Quad 50MHz, 800V/µs Op Amps
|
Linear Technology Corporation
LINER[Linear Technology]
|
| 5962-8876904KYA 5962-8876904KYC 5962-8876904KPA 59 |
5962-8876801PC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876904KPA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876904KXA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876904KPC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-88769022A · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876903FC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876901PC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876901PA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876901XA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876901YA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
5962-8876901YC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
|
Agilent (Hewlett-Packard)
|
| P2681A-08TT P2681A P2681A-08SR P2681A-08ST P2681A- |
ICs for Inductive Proximity Switches; Package: S--0; VCC (min): 3.1 V; VCC (max): 40.0 V; ICC (max): 0.84 mA; IQ (max): 60.0 mA; Operating Temperature (min): -40.0 degC;
General Purpose EMI Reduction IC
|
ALSC[Alliance Semiconductor Corporation]
|
| MAX6754UKLD0-T MAX6755UKLD0-T MAX6756UKLD0-T MAX67 |
Vcc: 5.0 V, active timeout period: 0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 5.0 V, active timeout period: 100 ms-320 ms, low-power, single/dual-voltage window detector
Vcc: 5.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 2.5 V, Vcc:1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, Vcc: 1.8 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.3 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, active timeout period:0.02 ms, low-power single/dual-voltage window detector
Vcc: 3.0 V, active timeout period:185 ms, low-power single/dual-voltage window detector
Vcc: 1.8 V, Vcc:adj, active timeout period:185 ms, low-power single/dual-voltage window detector
|
MAXIM - Dallas Semiconductor
|
| CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| MP03530 |
SAW Filter 257.50MHz
|
Golledge Electronics Lt...
|
| HSP45240 |
Address Sequencer, 50MHz
|
Intersil
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| LBS05002 |
50MHz SAW Filter 1.2MHz Bandwidth
|
SIPAT Co,Ltd
|
| HI3338 |
D/A Converter, 8-Bit, CMOS, 50MHz, R2R
|
Intersil
|
| 813-SL122.5M-20A |
122.50MHz IF SAW Filter 20.88MHz Bandwidth
|
Oscilent Corporation
|
| LBS13807 |
138.625MHz SAW Filter 0.50MHz Bandwidth
|
SIPAT Co,Ltd
|
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